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Vishay Introduces New 890 nm Infrared Light Emitting Diode with High Radiant Intensity
Time:2024-08-02 13:55:47      Click:1403

MALVERN, Pennsylvania, USA and SHANGHAI, China - 24 July 2024 - Vishay Semiconductors Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of a new 890nm high-speed infrared (IR) light-emitting diode in a clear, colourless leaded plastic package - the TSHF5211 - to expand its optoelectronics portfolio. High-speed infrared (IR) light-emitting diode --- TSHF5211, expanding its optoelectronics portfolio. Vishay Semiconductors TSHF5211 based on surface emitter chip technology, excellent VF temperature coefficient of -1.0 mV / K, irradiation intensity and rise and fall time better than the previous generation of devices.


The recently released light-emitting diode has a typical irradiance of 235 mW/sr at 100 mA drive current, which is 50 per cent higher than the previous generation of solutions. With a switching time of only 15 ns, a typical forward voltage as low as 1.5 V, and a half-intensity angle of only 10, the TSHF5211 is suitable for use as a high-intensity light-emitting diode in smoke detectors and industrial sensors. In these applications, the TSHF5211 provides good spectral matching with silicon photodetectors.


The device is RoHS and Vishay Green compliant, halogen-free, lead (Pb)-free, and can be soldered lead-free up to 260°C. The TSHF5211 is now available as a high intensity light emitting diode for smoke detectors and industrial sensors.


The TSHF5211 is now available for sampling and volume production, with a 20-week lead time for bulk orders.



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